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MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD30HVF1 DRAWING 22.0+/-0.3 18.0+/-0.3 7.2+/-0.5 7.6+/-0.3 4-C1 RoHS Compliance, DESCRIPTION RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications. Silicon MOSFET Power Transistor,175MHz,30W OUTLINE High power gain: Pout>30W, Gp>14.7dB @Vdd=12.5V,f=175MHz High Efficiency: 60%typ. 2 3 R1.6 14.0+/-0.4 6.6+/-0.3 FEATURES 1 APPLICATION For output stage of high power amplifiers in VHF band Mobile radio sets. 2.3+/-0.3 2.8+/-0.3 0.10 3.0+/-0.4 5.1+/-0.5 PIN 1.Drain 2.Source 3.Gate UNIT:mm RoHS COMPLIANT RD30HVF1-101 is a RoHS compliant products. RoHS compliance is indicate by the letter "G" after the Lot Marking. ABSOLUTE MAXIMUM RATINGS (Tc=25C UNLESS OTHERWISE NOTED) SYMBOL VDSS VGSS Pch Pin ID Tch Tstg Rth j-c PARAMETER Drain to source voltage Gate to source voltage Channel dissipation Input power Drain current Channel temperature Storage temperature Thermal resistance CONDITIONS Vgs=0V Vds=0V Tc=25C Zg=Zl=50 junction to case RATINGS 30 +/-20 75 2.5 7 175 -40 to +175 2.0 UNIT V V W W A C C C/W Note 1: Above parameters are guaranteed independently. ELECTRICAL CHARACTERISTICS SYMBOL IDSS IGSS VTH Pout D PARAMETER (Tc=25C, UNLESS OTHERWISE NOTED) CONDITIONS VDS=17V, VGS=0V VGS=10V, VDS=0V VDS=12V, IDS=1mA f=175MHz ,VDD=12.5V Pin=1.0W, Idq=0.5A VDD=15.2V,Po=30W(PinControl) f=175MHz,Idq=0.5A,Zg=50 Load VSWR=20:1(All Phase) MIN 1.3 30 55 LIMITS TYP MAX. 130 1 1.8 2.3 35 60 No destroy UNIT uA uA V W % - Zero gate voltage drain current Gate to source leak current Gate threshold voltage Output power Drain efficiency Load VSWR tolerance Note : Above parameters , ratings , limits and conditions are subject to change. RD30HVF1 MITSUBISHI ELECTRIC 1/8 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD30HVF1 RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W TYPICAL CHARACTERISTICS RD30HVF1 MITSUBISHI ELECTRIC 2/8 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD30HVF1 Vgs-Ids CHARACTERISTICS 10 8 6 4 2 0 Ta=+25C Vds=10V RoHS Compliance, 100 CHANNEL DISSIPATION Pch(W) 80 DRAIN DISSIPATION VS. AMBIENT TEMPERATURE Silicon MOSFET Power Transistor,175MHz,30W 40 20 0 0 40 80 120 160 200 AMBIENT TEMPERATURE Ta(C) Ids(A) 60 0 1 2 3 Vgs(V) 4 5 Vds-Ids CHARACTERISTICS 10 Ta=+25C Vgs=5.5V Vds VS. Ciss CHARACTERISTICS 200 180 160 140 120 100 80 60 40 20 0 0 Ta=+25C f=1MHz 8 6 4 2 0 0 2 4 6 Vds(V) 8 10 Vgs=5V Vgs=4.5V Vgs=4V Vgs=3.5V Vgs=3V Ciss(pF) Ids(A) 5 10 Vds(V) 15 20 Vds VS. Coss CHARACTERISTICS 140 120 100 Coss(pF) 80 60 40 20 0 0 5 10 Vds(V) 15 20 4 0 Crss(pF) 12 8 Ta=+25C f=1MHz Vds VS. Crss CHARACTERISTICS 20 16 Ta=+25C f=1MHz 0 5 10 Vds(V) 15 20 TYPICAL CHARACTERISTICS RD30HVF1 MITSUBISHI ELECTRIC 3/8 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD30HVF1 Pin-Po CHARACTERISTICS 50 100 Po RoHS Compliance, Pin-Po CHARACTERISTICS Ta=+25C f=175MHz Vdd=12.5V Idq=0.5A Silicon MOSFET Power Transistor,175MHz,30W 50 Po(dBm) , Gp(dB) , Idd(A) 40 30 20 10 0 0 Po 100 40 80 80 60 Ta=25C f=175MHz Vdd=12.5V Idq=0.5A Idd Pout(W) , Idd(A) Gp d(%) 40 20 0 10 20 Pin(dBm) 30 20 10 0 0 0.5 1 1.5 Pin(W) 40 20 0 2.5 2 Vdd-Po CHARACTERISTICS 80 Ta=25C f=175MHz Pin=1.0W Idq=0.5A Zg=ZI=50 ohm Po Vgs-Ids CHARACTERISTICS 2 16 14 12 10 Idd(A) Ids(A) 8 Idd 8 Vds=10V Tc=-25~+75C 6 +75C 4 -25C +25C 60 Po(W) 40 6 4 2 2 20 0 4 6 8 10 Vdd(V) 12 14 0 0 2 3 Vgs(V) 4 5 TEST CIRCUIT(f=175MHz) RD30HVF1 MITSUBISHI ELECTRIC 4/8 10 Jan 2006 d(%) 60 30 d MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD30HVF1 Vdd L1 C3 RoHS Compliance, Vgg C1 Silicon MOSFET Power Transistor,175MHz,30W 9.1kOHM 100OHM L2 8.2kOHM L1 RF-in 56pF 100pF 100pF 10pF 175MHz RD30HVF1 C2 RF-OUT 56pF 8pF 33pF100pF 27 32 34 51 90 100 12 10 32 43pF 5pF 50pF 8 4.8 44 54 90 100 Note:Board material-Teflon substrate 10.8 C1:2200pF 10uF in parallel C2:2200pF*2 in parallel C3:2200pF,330uF in parallel L1:4Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire L2:5Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire micro strip line width=4.2mm/50OHM,er:2.7,t=1.6mm Dimensions:mm INPUT/OUTPUT IMPEDANCE VS.FREQUENCY CHARACTERISTICS RD30HVF1 MITSUBISHI ELECTRIC 5/8 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD30HVF1 Zo=10 RoHS Compliance, f=175MHz Zout Silicon MOSFET Power Transistor,175MHz,30W f=146MHz Zout f=135MHz Zout f=175MHz Zin f=135MHz Zin f=146MHz Zin Zin , Zout f (MHz) 135 146 175 Zin (ohm) 0.71-j7.67 0.94-j6.46 0.53-j5.34 Zout (ohm) 1.72-j0.86 2.12-j0.78 1.87-j0.70 Conditions Po=40W, Vdd=12.5V,Pin=1.0W Po=38W, Vdd=12.5V,Pin=1.0W Po=35W, Vdd=12.5V,Pin=1.0W RD30HVF1 MITSUBISHI ELECTRIC 6/8 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD30HVF1 S12 S22 (ang) -11.6 -18.8 -22.2 -24.2 -26.2 -27.0 -24.4 -18.5 -8.2 8.0 21.6 35.6 45.7 53.5 58.4 61.6 60.7 61.5 63.1 65.6 62.3 (mag) 0.687 0.723 0.740 0.760 0.806 0.825 0.853 0.879 0.887 0.902 0.914 0.918 0.928 0.933 0.936 0.943 0.947 0.947 0.953 0.955 0.958 (ang) -166.3 -168.8 -169.6 -170.5 -172.5 -174.8 -177.1 -179.4 178.4 176.1 174.1 172.2 170.2 168.4 166.6 164.8 163.3 161.7 159.9 158.7 155.5 (mag) 0.015 0.014 0.013 0.012 0.010 0.009 0.007 0.006 0.005 0.004 0.005 0.005 0.005 0.007 0.007 0.008 0.009 0.011 0.011 0.013 0.015 RoHS Compliance, Freq. [MHz] 100 150 175 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1100 S11 (mag) 0.867 0.879 0.885 0.888 0.905 0.915 0.926 0.933 0.936 0.945 0.950 0.951 0.954 0.957 0.962 0.963 0.963 0.963 0.962 0.964 0.966 (ang) -172.4 -176.3 -177.5 -179.1 178.5 176.2 174.1 171.8 169.5 167.6 165.6 163.6 161.7 159.9 158.2 156.5 154.8 153.2 151.6 150.1 146.9 (mag) 8.747 5.523 4.571 3.852 2.877 2.202 1.754 1.422 1.167 0.985 0.842 0.725 0.635 0.559 0.495 0.449 0.407 0.366 0.337 0.315 0.275 Silicon MOSFET Power Transistor,175MHz,30W S21 (ang) 72.7 61.2 56.4 52.4 44.1 37.1 31.4 25.8 20.9 17.2 13.3 9.8 7.2 3.7 1.3 -0.5 -3.8 -5.2 -6.6 -9.9 -12.1 RD30HVF1 S-PARAMETER DATA (@Vdd=12.5V, Id=500mA) RD30HVF1 MITSUBISHI ELECTRIC 7/8 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD30HVF1 RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. RD30HVF1 MITSUBISHI ELECTRIC 8/8 10 Jan 2006 |
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